advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 200v simple drive requirement r ds(on) 170m fast switching characteristic i d 18a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a maximum thermal resistance, junction-ambient 65 /w data and specifications subject to change without notice 200805264 thermal data parameter storage temperature range total power dissipation 34.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.28 continuous drain current, v gs @ 10v 9.5 pulsed drain current 1 60 gate-source voltage 20 continuous drain current, v gs @ 10v 18 parameter rating drain-source voltage 200 1 AP18N20GI rohs-compliant product a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. g d s the to-220cfm isolation package is widely preferred for commercial-industrial through hole applications. g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 200 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =8a - - 170 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =10a - 9.5 - s i dss drain-source leakage current v ds =200v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =160v , v gs =0v - - 100 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =10a - 19 30 nc q gs gate-source charge v ds =160v - 5 - nc q gd gate-drain ("miller") charge v gs =10v - 6 - nc t d(on) turn-on delay time 2 v dd =100v - 9 - ns t r rise time i d =11a - 21 - ns t d(off) turn-off delay time r g =9.1 ? v gs =10v - 25 - ns t f fall time r d =9.1 -19- ns c iss input capacitance v gs =0v - 1065 1700 pf c oss output capacitance v ds =25v - 185 - pf c rss reverse transfer capacitance f=1.0mhz - 3 - pf r g gate resistance f=1.0mhz - 1.6 2.4 ?
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP18N20GI 0 10 20 30 0.0 4.0 8.0 12.0 16.0 20.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 16v 12 v 10 v 8.0v v g =6.0v 0 10 20 30 40 0.0 4.0 8.0 12.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 16v 12 v 10 v 8.0v v g =6.0v 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =8a v g =10v 0 2 4 6 8 10 12 14 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 120 140 160 180 200 220 240 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =5a t c =25 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 AP18N20GI 0 1 10 100 0.1 1 10 100 1000 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 4 8 12 16 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a 1 10 100 1000 10000 1 21416181 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 10v q gs q gd q g charge 0 3 6 9 12 15 02468 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o ct j =25 o c v ds =5v v ds = 100 v v ds = 130 v v ds = 160 v
package outline : to-220cfm millimeters min nom max a 4.30 4.70 4.90 a1 2.30 2.65 3.00 b 0.50 0.70 0.90 b1 0.95 1.20 1.50 c 0.45 0.65 0.80 c2 2.30 2.60 2.90 e 9.70 10.00 10.40 l 12.50 13.00 13.50 l3 2.91 3.41 3.91 l4 14.70 15.40 16.10 ---- 3.20 ---- e ---- 2.54 ---- 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220cfm symbols advanced power electronics corp. package code 18n20gi part numbe r date code (ywwsss) y last digit of the year ww week sss sequence ywwsss logo a1 a c e b b1 e l4 c2 a1 a c e b b1 e l4 c2 l3 l meet rohs requirement for low voltage mosfet only 5
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